1/2 medium power transistor (50v,0.5a) medium power transistor (50v,0.5a) 2sd1949 2sd1949 / 2sd1484k 2sd1484k data sheet 2011.06 - rev. e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. symbol v cbo v ceo v ebo i c p c tj tstg limits 5050 5 0.50.2 150 ? 55 to +150 unit vv v a w symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo h fe f t cob 5050 5 ?? 120 ?? ?? ? ? ? ? 250 6.5 ?? ? 0.50.5 390 ?? vv v ? mhz pf i c = 1ma v cb = 30v v eb = 4v v ce /i c = 3v/10ma v ce = 5v , i e = ? 20ma , f = 100mhz v cb = 10v , i e = 0a , f = 1mhz 2sd1484k smt3 qr t146 3000 c c a i c = 100 a i e = 100 a a parameter transition frequencyoutput capacitance v ce(sat) ?? 0.4 vi c /i b = 150ma/15ma electrical characteristics (ta=25 c) parameter collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector outoff current collector power dissipationjunction temperature storage temperature absolute maximum rationgs (ta=25 c) packaging specifications and h fe type package h fe code basic ordering unit (pleces) 2sd1949 umt3 qr t106 3000 marking danotes h fe y y features dimensions (unit : mm) 1) high current.(i c =0.5a) 2) low saturation voltage, typically v ce(sat) =0.1v at i c / i b =150ma / 15ma. collector-base voltage collector-emitter voltageemitter-base voltage collector current emitter cutoff currentdc current rransfer ratio collector-emitter saturation voltage h fe values are classified as follows : item q r h fe 120 to 270 180 to 390 umt3(sc-70) (1) emitter(2) bace (3) collector (1) emitter (2) bace (3) collector smt3(sc-59) ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 downloaded from: http:///
2/2 2011.06 - rev. e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet 2sd1949 2sd1949 / 2sd1484k 2sd1484k electrical characteristic curves electrical characteristic curves 2010 52 1 0.50.2 0.1 0.2 0 0.4 0.8 0.6 1.2 1.0 50 100 200 base to voltage : v be (v) fig.1 ground emitter propagation characteristics collector current : i c (ma) v ce =6v 6040 20 0 1 024 35 80 100 collector to emitter voltage : v ce (v) fig.2 ground emitter output characteristics collector current : i c (ma) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 i b =0ma v ce =6v 500200 100 50 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 collector current i c (ma) fig.3 dc current gain vs. collector current ( ) dc current gain h fe 1000 500200 100 5020 12 5 10 20 50 100 200 500 1000 collector current i c (ma) collector current i c (ma) fig.4 dc current gain vs. collector currnet ( ) dc current gain h fe v ce =10v - 25 c ta=75 c 25 c 5020 10 5 0.1 0.2 0.5 12 510 20 collector to base voltage : v cb (v) emitter to base voltage : v eb (v) fig.7 input-and-output capacity vs.voltage characteristic collector output capacitance : cob (pf)emitter input capacitance : cib (pf) ta=25 cf=1mhz i e =0a 0.50.2 0.1 0.050.02 5 10 20 50 100 200 500 1000 collector current i c (ma) fig.6 collector-emitter saturation voltage vs. collector current i c /i b =10 - 25 c ta=75 c 25 c 0.5 0.20.1 0.05 0.02 5 10 20 50 100 200 500 fig.5 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce (sat) (v) collector saturation voltage : v ce (sat) (v) emitter current : i e (ma) 500 200 100 - 1 - 2 - 5 - 10 - 20 - 50 fig.8 transition frequency vs.emitter current transition frequency : f t (mh z ) ta=25 c cib cob ta=25 c ta=25 c ta = 100 c 25 c - 25 c v ce =3v 1v i c /i b =100/1 50/1 20/1 10/1 v ce =6v downloaded from: http:///
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